Parts Listing - SAMSUNGEM
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| SELECT | PART | MANUFACTURER | QTY | RoHS | QA |
|---|---|---|---|---|---|
| Select | CIB41P151NE FERRITE BEADS MONO-LAYER 150OHM 25% 100MHZ 1A 50MOHM DCR 1806 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIC10P221NC FERRITE BEADS MULTI-LAYER HIGH CURRENT 220OHM 25% 100MHZ 1.4A 100MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIC21P221NE FERRITE BEADS MULTI-LAYER 220OHM 25% 100MHZ 2A 50MOHM DCR 0805 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIC21P300NC FERRITE BEADS MULTI-LAYER 30OHM 25% 100MHZ 3A 15MOHM DCR 0805 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIC21P331AC FERRITE BEAD HIGH CURRENT INDUCTOR SMD 330R IMPEDANCE 0.05R DC RESISTANCE 2A CURRENT | SAMSUNGEM | 0 | Unconfirmed | QA |
| Select | CIC21P600NE FERRITE BEADS MULTI-LAYER 60OHM 25% 100MHZ 3A 25MOHM DCR 0805 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIC31P121NE FERRITE BEADS MULTI-LAYER 120OHM 25% 100MHZ 2A 25MOHM DCR 1206 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIC41P800NE FERRITE BEADS MULTI-LAYER 80OHM 25% 100MHZ 3A 10MOHM DCR 1806 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG10W1R0MNC INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 1UH 20% 1MHZ FERRITE 950MA 200MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG10W2R2MNC INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 2.2UH 20% 1MHZ FERRITE 750MA 300MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG10W4R7MNC INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 4.7UH 20% 1MHZ FERRITE 620MA 500MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG21W1R0MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 1UH 20% 1MHZ FERRITE 1.05A 130MOHM DCR 0805 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG21W2R2MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 2.2UH 20% 1MHZ FERRITE 810MA 200MOHM DCR 0805 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG21W4R7MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 4.7UH 20% 1MHZ FERRITE 650MA 300MOHM DCR 0805 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG22H1R0MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 1UH 20% 1MHZ FERRITE 1.5A 80MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG22H2R2MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 2.2UH 20% 1MHZ FERRITE 1.2A 116MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG22H4R7MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 4.7UH 20% 1MHZ FERRITE 800MA 233MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG22L100MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 10UH 20% 1MHZ FERRITE 600MA 323MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG22L6R8MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 6.8UH 20% 1MHZ FERRITE 800MA 203MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG22L6R8MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 6.8UH 20% 1MHZ FERRITE 800MA 203MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Unconfirmed | QA |
| Select | CIG22LR47MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 470NH 20% 1MHZ FERRITE 1.8A 40MOHM DCR 1008 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIG32W1R0MNE INDUCTOR POWER CHIP SHIELDED MULTI-LAYER 1UH 20% 1MHZ FERRITE 1.5A 60MOHM DCR 1210 EMBOSSED T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH05T47NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 47NH 5% 100MHZ 8Q-FACTOR CERAMIC 200MA 1.3OHM DCR 0402 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH05T4N7SNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 4.7NH 0.3NH 100MHZ 8Q-FACTOR CERAMIC 300MA 240MOHM DCR 0402 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH05T68NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 68NH 5% 100MHZ 8Q-FACTOR CERAMIC 180MA 1.4OHM DCR 0402 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH05T82NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 82NH 5% 100MHZ 8Q-FACTOR CERAMIC 150MA 1.6OHM DCR 0402 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH10T18NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 18NH 5% 100MHZ 12Q-FACTOR CERAMIC 500MA 350MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH10T18NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 18NH 5% 100MHZ 12Q-FACTOR CERAMIC 500MA 350MOHM DCR 0603 PA | SAMSUNGEM | 0 | Unconfirmed | QA |
| Select | CIH10T22NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 22NH 5% 100MHZ 12Q-FACTOR CERAMIC 500MA 400MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
| Select | CIH10T33NJNC INDUCTOR HIGH FREQUENCY CHIP MULTI-LAYER 33NH 5% 100MHZ 12Q-FACTOR CERAMIC 500MA 550MOHM DCR 0603 PAPER T/R | SAMSUNGEM | 0 | Compliant | QA |
1134 Records found matching SAMSUNGEM
Record 1 to 30 of 1134